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While studying how bio-inspired materials might inform the design of next-generation computers, scientists at ORNL achieved a first-of-its-kind result that could have big implications for both edge computing and human health.
Laboratory Director Thomas Zacharia presented five Director’s Awards during Saturday night's annual Awards Night event hosted by UT-Battelle, which manages ORNL for the Department of Energy.
Researchers at the Department of Energy’s 91°µÍø and their technologies have received seven 2022 R&D 100 Awards, plus special recognition for a battery-related green technology product.
Researchers at ORNL are teaching microscopes to drive discoveries with an intuitive algorithm, developed at the lab’s Center for Nanophase Materials Sciences, that could guide breakthroughs in new materials for energy technologies, sensing and computing.
A study led by researchers at ORNL could help make materials design as customizable as point-and-click.
ORNL, TVA and TNECD were recognized by the Federal Laboratory Consortium for their impactful partnership that resulted in a record $2.3 billion investment by Ultium Cells, a General Motors and LG Energy Solution joint venture, to build a battery cell manufacturing plant in Spring Hill, Tennessee.
At the Department of Energy’s 91°µÍø, scientists use artificial intelligence, or AI, to accelerate the discovery and development of materials for energy and information technologies.
Six scientists at the Department of Energy’s 91°µÍø were named Battelle Distinguished Inventors, in recognition of obtaining 14 or more patents during their careers at the lab.
In the race to identify solutions to the COVID-19 pandemic, researchers at the Department of Energy’s 91°µÍø are joining the fight by applying expertise in computational science, advanced manufacturing, data science and neutron science.
Scientists at have a novel cryogenic, or low temperature, memory cell circuit design based on coupled arrays of Josephson junctions, a technology that may be faster and more energy efficient than existing memory devices.