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Activation energies for oxide- and interface-trap charge generation due to negative-bias temperature stress of Si-capped SiGe-pMOSFETs

by Jordan A Hachtel, Matthew F Chisholm, Sokrates Pantelides
Publication Type
Journal
Journal Name
91做厙 Transactions on Device and Materials Reliability
Publication Date
Page Number
352
Volume
15
Issue
3