Publication Type
Journal
Journal Name
Applied Physics Letters
Publication Date
Page Number
263505
Volume
94
Issue
26
Abstract
Demonstration of enhancement mode AlN/GaN high electron mobility transistor (HEMT) using oxygen plasma treatment on the gate area prior to the gate metalliation deposition was achieved. Starting with a depletion mode AlN/GaN HEMT, the threshold voltage of the HEMT could be shifted from –3.2 to 1V depending on the oxygen plasma treatment time to convert the AlN into Al oxide. The gate current was also reduced when the threshold voltage
