Publication Type
Journal
Journal Name
Nano Letters
Publication Date
Page Numbers
1913 to 1918
Volume
11
Issue
5
Abstract
Complex nanostructures such as semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we construct a field effect transistor (FET) based on single CdS nanotetrapods with a ferroelectric Ba0.7Sr0.3TiO3 (BST) film as high-к, switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods, which reveals a p-type field effect up to room temperature. The conductance modulation in the FET originates from the channel tuning in the arm-core-arm junctions of nanotetrapods, displaying a single-electron transistor effect at low temperature (8.5 K). The ferroelectric gate dielectric enables not only an enhanced capacitance coupling but the non-volatile memory effect as well. A proof-of-principle of ferroelectric FET operation has thus been demonstrated in a nanoscale three-dimensional object and at the single electron level.
