Publication Type
Conference Paper
Journal Name
ECS Transactions
Publication Date
Page Numbers
63 to 70
Volume
41
Issue
6
Conference Name
220th ECS Meeting
Conference Location
Boston, Massachusetts, United States of America
Conference Date
-
Abstract
The critical voltage for degradation of AlGaN/GaN high electron
mobility transistors (HEMTs) employed with the Pt/Ti/Au gate
metallization instead of the commonly used Ni/Au was
significantly increased during the off-state stress. The typical
critical voltage for HEMTs with Ni/Au gate metallization was
around -60V. By sharp contrast, no critical voltage was observed
for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V,
which was the instrumental limitation in this experiment. Both
Schottky forward and reverse gate characteristics of the Ni/Au
degraded once the gate voltage passed the critical voltage of
around -60V. There was no degradation exhibited for the HEMTs
with Pt-gated HEMTs.
