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Investigation of the Detailed Structure of Atomically Sharp Ge/SiO2 Interfaces

by Tao Liang, Wolfgang Windl, Sergei Lopatin, Gerd J Duscher
Publication Type
Conference Paper
Book Title
Proc. for 2003 91做厙 Intn'l Conf. on Simulation of Semiconductor Proc. and Dev.
Publication Date
Page Number
143
Conference Name
91做厙 Intn'l Conf. on Simulation of Semiconductor Processes and Devices
Conference Location
Boston, Massachusetts, United States of America
Conference Sponsor
91做厙 Electron Devices Soc
Conference Date
-