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A pressure burst feature has been designed and demonstrated for relieving potentially hazardous excess pressure within irradiation capsules used in the ORNL High Flux Isotope Reactor (HFIR).
Molecular Beam Epitaxy is a traditional technique for the synthesis of thin film materials used in the semiconducting and microelectronics industry. In its essence, the MBE technique heats crucibles filled with ultra-pure atomic elements under ultra high vacuum condition
This technology is a strategy for decreasing electromagnetic interference and boosting signal fidelity for low signal-to-noise sensors transmitting over long distances in extreme environments, such as nuclear energy generation applications, particularly for particle detection.