Invention Reference Number
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications. While methods exist to facilitate polarization switching in nitrides, direct write methods for engineering ferroelectricity are limited. This technology consists of strategic ion irradiation techniques to stabilize defects conducive to enhanced device operation, by targeting the creation and annihilation of defect types such as point defects, grain boundaries, and nanoparticles.
Description
This technique utilizes the local and rapid interaction of incoming ions with the host material’s lattice capable of bypassing kinetically-limited pathways toward defect stabilization that are not attainable by conventional methods. The approach is to bombard a surface, irradiating it to create defects in the material. The defects create mediated switching of polarity, opening the door for aluminum nitride based ferroelectronics. Defects alteration by ion irradiation occurs through a transient, rapid energy deposition process, where the exceeding rates and concentrations are critical to overcoming kinetic barriers and stabilizing defects. Optimal chemistry, density, and location of the resulting defects is achieved, tuned, and engineered based on the energy, dosage, and divergence of the incoming ions. The ion acceleration occurs within a closed chamber of inert or reactive environment.
Benefits
- Induces polarity switching
- Improved reliability and performance
- Reduced energy consumption
- Significantly reduces coercive fields in aluminum nitride
- Can pattern where material is ferroelectric
Applications and Industries
- Microelectronics
- Next-generation data storage solutions, memory storage
- Photonics
- Advanced telecommunications
- Radiation cladding and thermal barrier coatings
Contact
To learn more about this technology, email partnerships@ornl.gov or call 865-574-1051.
