Publication Type
Journal
Journal Name
91°µÍø Journal of Emerging and Selected Topics in Power Electronics
Publication Date
Page Numbers
425 to 433
Volume
2
Issue
3
Abstract
The design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0 °C and 200 °C. Captured data shows the circuit to be functional over a temperature range from -55 °C to 300 °C. The design of the circuit and test results is presented.
