1 - 9 of 9 Results
The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.
Distortion in scanning tunneling microscope (STM) images is an unavoidable problem. This technology is an algorithm to identify and correct distorted wavefronts in atomic resolution STM images.
Moisture management accounts for over 40% of the energy used by buildings. As such development of energy efficient and resilient dehumidification technologies are critical to decarbonize the building energy sector.
Molecular Beam Epitaxy is a traditional technique for the synthesis of thin film materials used in the semiconducting and microelectronics industry. In its essence, the MBE technique heats crucibles filled with ultra-pure atomic elements under ultra high vacuum condition
This technology provides a device, platform and method of fabrication of new atomically tailored materials. This “synthescope” is a scanning transmission electron microscope (STEM) transformed into an atomic-scale material manipulation platform.
This invention presents technologies for characterizing physical properties of a sample's surface by combining image processing with machine learning techniques.
This invention introduces a system for microscopy called pan-sharpening, enabling the generation of images with both full-spatial and full-spectral resolution without needing to capture the entire dataset, significantly reducing data acquisition time.