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Researcher
- Ali Passian
- Rama K Vasudevan
- Ryan Dehoff
- Sergei V Kalinin
- Yongtao Liu
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- Kyle Kelley
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- David Nuttall
- Debangshu Mukherjee
- Georgios Polyzos
- Gerd Duscher
- Gerry Knapp
- Gs Jung
- Gyoung Gug Jang
- Harper Jordan
- Hoyeon Jeon
- Huixin (anna) Jiang
- Ilia N Ivanov
- Ivan Vlassiouk
- James Haley
- Jamieson Brechtl
- Jaswinder Sharma
- Jewook Park
- Joel Asiamah
- Joel Dawson
- Jong K Keum
- Jovid Rakhmonov
- Kai Li
- Kyle Gluesenkamp
- Liam Collins
- Mahshid Ahmadi-Kalinina
- Mariam Kiran
- Marti Checa Nualart
- Md Inzamam Ul Haque
- Mina Yoon
- Nageswara Rao
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- Nicholas Richter
- Nickolay Lavrik
- Ondrej Dyck
- Patxi Fernandez-Zelaia
- Peeyush Nandwana
- Philip Bingham
- Radu Custelcean
- Rangasayee Kannan
- Roger G Miller
- Saban Hus
- Sai Mani Prudhvi Valleti
- Sarah Graham
- Sheng Dai
- Singanallur Venkatakrishnan
- Steven Randolph
- Sudarsanam Babu
- Sumner Harris
- Sunyong Kwon
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- Xiaobing Liu
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- Zhiming Gao

Dual-GP addresses limitations in traditional GPBO-driven autonomous experimentation by incorporating an additional surrogate observer and allowing human oversight, this technique improves optimization efficiency via data quality assessment and adaptability to unanticipated exp

Here we present a solution for practically demonstrating path-aware routing and visualizing a self-driving network.

Currently available cast Al alloys are not suitable for various high-performance conductor applications, such as rotor, inverter, windings, busbar, heat exchangers/sinks, etc.

The invented alloys are a new family of Al-Mg alloys. This new family of Al-based alloys demonstrate an excellent ductility (10 ± 2 % elongation) despite the high content of impurities commonly observed in recycled aluminum.

We developed and incorporated two innovative mPET/Cu and mPET/Al foils as current collectors in LIBs to enhance cell energy density under XFC conditions.

The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.

High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.